Combinative solution processing and Li doping approach to develop p-type NiO thin films with enchanced electrical properties

The deposition of nickel oxide (NiO x ) thin film from an acetylacetonate source using many solution-based techniques has been avoided owing to its poor solubility in alcohol solvents. From this perspective, work provides a systematic investigation the development NiO film, combinative approach ultrasonic spray pyrolysis (USP) and Li dopant for synthesis optimization structural optoelectronic properties films. An in-depth comparative analysis acetylacetonate-based precursor, employing acetonitrile methanol as solvents, is provided. It demonstrated that USP precursor yielded uniform, well-compact, transparent films, with polycrystalline cubic crystal structures. By screening temperature range 300–450°C, 400°C was identified optimal processing leading compact, highly transparent, p-type conductive At optimized conditions (400°C), lithium-doped (Li:NiO deposited. shift main (200) XRD peak position 43.48° (0-Li:NiO 43.56° (60-Li:NiO indicated incorporation into lattice. X-ray photoelectron spectroscopy (XPS) study employed unravel deposited Li:NiO With deconvolution Ni 2p core level as-deposited (0, 60)-Li:NiO intensity 3+ related found increase slightly doping. Furthermore, all films showed conductivity behavior, resistivity reduced 10 4 Ωcm 2 ). Based on these results, suggested USP-deposited suitable application inverted structure solar cells hole transport layer.